AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
MRF5S9150HR3 MRF5S9150HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D
,
DRAIN EFFICIENCY (%)
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
16
0
Pout, OUTPUT POWER (WATTS) CW
23
70
21
60
20
C
50
30
20
0.1 10 1001
VDD= 28 Vdc
IDQ
= 1500 mA
f = 880 MHz
Gps
G
ps
, POWER GAIN (dB)
22
10
TC
= ?30
C
?30C
25C
85
19
18
40
85C
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
VDD
= 12 V
16
V
250
16
21
0 20050 100 150
19
IDQ
= 1500 mA
f = 880 MHz
20
V
24
V
28
V
32
V
17
ηD
20
18
17
300
100 120 140 160 180 200
210
1010
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2
for MTTF in a particular application.
108
107
MTTF FACTOR (HOURS X AMPS
2
)
90 110 130 150 170 190
109
Figure 13. MTTF Factor versus Junction Temperature
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